Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature

被引：19
作者：
Yu, J. L. [1 ]
Chen, Y. H. [1 ]
Jiang, C. Y. [1 ]
Liu, Y. [1 ]
Ma, H. [1 ]
Zhu, L. P. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 14期
基金：
中国国家自然科学基金;
关键词：
2-DIMENSIONAL ELECTRON; SPIN; PHOTOCONDUCTIVITY; SEMICONDUCTORS; EXCITATION; CDS;
D O I：
10.1063/1.3701281
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The photocurrent spectra of inter-band photoinduced anomalous Hall effect (AHE) in insulating InGaAs/AlGaAs quantum wells have been observed at room temperature. The AHE current changes linearly with longitudinal electric fields. The anomalous Hall conductivity corresponding to excitonic state 1HH-1E (the first valence subband of heavy hole to the first conduction) has the same sign with that of excitonic state 1LH-1E, while the sign inverses when the photon energy is larger than the excitonic state 1LH-1E. The reason for this interesting phenomenon has been discussed. Due to the strong Rashba spin-orbit coupling in this perfect crystal, the photoinduced AHE is supposed to be intrinsic. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3701281]
引用
收藏
页数：4
相关论文
共 27 条
  • [1] Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells
    Bel'kov, VV
    Ganichev, SD
    Schneider, P
    Back, C
    Oestreich, M
    Rudolph, J
    Hägele, D
    Golub, LE
    Wegscheider, W
    Prettl, W
    [J]. SOLID STATE COMMUNICATIONS, 2003, 128 (08) : 283 - 286
  • [2] Spin splitting and spin current in strained bulk semiconductors
    Bernevig, BA
    Zhang, SC
    [J]. PHYSICAL REVIEW B, 2005, 72 (11):
  • [3] Cameron A. R., 1996, TOP M ULTR PHEN SAN, V8, P126
  • [4] Light-induced Hall effect in semiconductors with spin-orbit coupling
    Dai, Xi
    Zhang, Fu-Chun
    [J]. PHYSICAL REVIEW B, 2007, 76 (08)
  • [5] Theory of spin hall conductivity in n-doped GaAs -: art. no. 166605
    Engel, HA
    Halperin, BI
    Rashba, EI
    [J]. PHYSICAL REVIEW LETTERS, 2005, 95 (16)
  • [6] Experimental separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells
    Ganichev, SD
    Bel'kov, VV
    Golub, LE
    Ivchenko, EL
    Schneider, P
    Giglberger, S
    Eroms, J
    De Boeck, J
    Borghs, G
    Wegscheider, W
    Weiss, D
    Prettl, W
    [J]. PHYSICAL REVIEW LETTERS, 2004, 92 (25) : 256601 - 1
  • [7] Spin photocurrents in quantum wells
    Ganichev, SD
    Prettl, W
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (20) : R935 - R983
  • [8] Extrinsic Spin Hall Effect from First Principles
    Gradhand, Martin
    Fedorov, Dmitry V.
    Zahn, Peter
    Mertig, Ingrid
    [J]. PHYSICAL REVIEW LETTERS, 2010, 104 (18)
  • [9] Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells
    Gvozdic, DM
    Ekenberg, U
    [J]. EUROPHYSICS LETTERS, 2006, 73 (06): : 927 - 933
  • [10] Spin Hall effect
    Hirsch, JE
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (09) : 1834 - 1837
123