MOCVD growth of InAsN for infrared applications

The ternary alloy InAsN has been grown by MOCVD for the first time. The growth was performed at 70 Torr using TMI, AsH3 and NH3 as source gases and GaAs(100) as substrate. The growth temperature and AsH3 to NH3 gas phase ratio, NH3/AsH3, were changed from 550 to 750 degrees C and 100 to 1000, respectively. InAs was also grown at 100 Torr and 500 degrees C. All the samples were characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) at room temperature. The increase in growth temperature and gas phase ratio of NH3 made the nitrogen solid composition larger. All the samples have a direct band gap which decreases with increasing nitrogen content. The smallest band gap energy of 0.12 eV at room temperature was obtained for InAs0.939N0.061. (C) 1997 Elsevier Science Ltd.