Hall resistance plateaus in high quality Graphene samples at large currents: Toward quantization tests

被引：1

作者：

Bennaceur, K. ^{[1
]}

Guignard, J. ^{[2
]}

Schopfer, F. ^{[2
]}

Poirier, W. ^{[2
]}

Glattli, D. C. ^{[1
]}

机构：

[1] CEA Saclay, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France

[2] LNE, Trappes, France

来源：

2008 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST | 2008年

关键词：

D O I：

10.1109/CPEM.2008.4574629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graphene Hall bats prepared from exfoliated natural graphite of large size and high quality have been measured in the quantum Hall effect regime. The monolayer Graphene sheet shows Hall quantization robust upon applying very large current. Low longitudinal resistance is found up to 10 mu A with finite width h/2e(2) Hall plateau at 4.2 K and 16 T. The TiAu / Graphene contact resistance is found low, typically 20 Omega to 50 Omega. The results strongly indicate that Graphene is a promising new material for quantum metrology.

引用

页码：14 / +

页数：2