Electrical Characteristics of ZnO Nanorods Reinforced Polymer Nanocomposite Thin Films

被引：2

作者：

Bhattacharjee, Snigdha ^{[1
]}

Roy, Asim ^{[1
]}

机构：

[1] Natl Inst Technol Silchar, Dept Phys, Silchar 788010, Assam, India

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014) | 2015年 / 1661卷

关键词：

NANOWIRE ARRAYS; ENHANCEMENT; MEMORIES; EMISSION; DEVICES;

D O I：

10.1063/1.4915396

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

引用

页数：6

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