Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode

被引：27

作者：

Huang, Huihui ^{[1
]}

Fang, Guojia ^{[1
]}

Li, Songzhan ^{[1
,2
]}

Long, Hao ^{[1
]}

Mo, Xiaoming ^{[1
]}

Wang, Haoning ^{[1
]}

Li, Yuan ^{[3
]}

Jiang, Qike ^{[4
,5
]}

Carroll, David L. ^{[3
]}

Wang, Jianbo ^{[4
,5
]}

Wang, Mingjun ^{[1
]}

Zhao, Xingzhong ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Dept Elect Sci & Technol, Key Lab Artificial Micro & Nano Struct,Minist Edu, Wuhan 430072, Peoples R China

[2] Wuhan Text Univ, Coll Elect & Informat Engn, Wuhan 430073, Peoples R China

[3] Wake Forest Univ, Dept Phys, Ctr Nanotechnol & Mol Mat, Winston Salem, NC 27109 USA

[4] Wuhan Univ, Ctr Elect Microscopy, Sch Phys & Technol, Wuhan 430072, Peoples R China

[5] Wuhan Univ, MOE Key Lab Artifcial Micro & Nano Struct, Wuhan 430072, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

基金：

国家高技术研究发展计划(863计划);

关键词：

electroluminescence; gallium compounds; II-VI semiconductors; light emitting diodes; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; OPTOELECTRONIC DEVICES; P-GAN; FABRICATION; FILMS;

D O I：

10.1063/1.3672051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricate an ultraviolet (UV)/orange bicolor light emitting diode (LED) based on an n-ZnO/n-GaN isotype heterojunction, which presents a sharp ultraviolet emission centered at 367 nm and a broad orange emission centered at 640 nm under forward and reverse biases, respectively. Time dependence electroluminescence (EL) measurements reveal that this device shows good stability. The electroluminescence mechanism of the bicolor light emitting diode is discussed in terms of the material properties of the interfacial layer and the luminescence properties of the device in this work. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672051]

引用

页数：4

共 22 条

[1] Fabrication of ZnO-based metal-insulator-semiconductor diodes by ion implantation [J].