High Performance (001) β-Ga2O3 Schottky Barrier Diode

被引：0

作者：

Wang, Y. G. ^{[1
]}

Lv, Y. J. ^{[1
]}

Zhou, X. Y. ^{[1
]}

Guo, H. Y. ^{[1
]}

Song, X. B. ^{[1
]}

Tan, X. ^{[1
]}

Liang, S. X. ^{[1
]}

Fang, Y. L. ^{[1
]}

Feng, Z. H. ^{[1
]}

Cai, S. J. ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Hezuo Rd, Shijiazhuang, Hebei, Peoples R China

来源：

2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS) | 2018年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A schottky barrier diode (SBD) without field plate was fabricated on a Si-doped N-Ga2O3 drift layer, which was grown by halide vapor phase epitaxy (HVPE) on a heavily Sn-doped (001) beta-Ga2O3 substrate. The thickness and concentration of N-drift layer were 5 mu m and 3.8x10(16) cm(-3), respectively. The reverse breakdown voltage (BV) and specific on-resistance (R-on) of the fabricated Ga2O3 SBD were 825 V and 3.5 m Omega.cm(2), respectively, leading to a high Baliga figure-of-merit (BV2/R-on) of 194.5 MW.cm(-2). Besides, a high current on/off ratio of 4.2x10(10) was obtained.

引用

页码：103 / 104

页数：2

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