Advanced planar LWIR and VLWIR HgCdTe focal plane arrays

被引：0

作者：

Chu, M ^{[1
]}

Gurgenian, RH ^{[1
]}

Mesropian, S ^{[1
]}

Terterian, S ^{[1
]}

Becker, L ^{[1
]}

Walsh, D ^{[1
]}

Kokoroski, SA ^{[1
]}

Goodnough, M ^{[1
]}

Rosner, B ^{[1
]}

机构：

[1] Fermionics Corp, Simi Valley, CA 93063 USA

来源：

FOCAL PLANE ARRAYS FOR SPACE TELESCOPES | 2003年 / 5167卷

关键词：

infrared; HgCdTe; focal plane array; ion implantation; heterojunction; planar ion-implantation-isolated heterojunction; P13H; LWIR; VLWIR;

D O I：

10.1117/12.503236

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

The advanced planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques, has been developed and used to produce longwave and very longwave HgCdTe focal plane arrays in the 320v256 format. The wavelength of these arrays ranges from 10.0-17.0mum. The operability of the longwave HgCdTe arrays is typically over 97%. Without anti-reflection coating and with a 60degrees FOV cold shield, the D* of the 10.0mum array is 9.4x10(10) cm(.)(Hz)W-1/2.(-1) at 77K. The 14.7mum and 17.0mum very longwave HgCdTe array diodes have excellent reverse characteristics. The detailed characteristics of these arrays are presented.

引用

页码：159 / 165

页数：7

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