Formation of Cu or Cu2O Nanoparticles Embedded in a Polyimide Film for Nanofloating Gate Memory

被引：6

作者：

Choi, Dong Joo ^{[1
]}

Ahn, Key-One ^{[1
]}

Kim, Eun Kyu ^{[2
]}

Kim, Young-Ho ^{[1
]}

机构：

[1] Hanyang Univ, Coll Engn, Div Mat Sci & Engn, Seoul 133791, South Korea

[2] Hanyang Univ, Coll Engn, Dept Phys, Seoul 133791, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 12期

关键词：

Cu Nanoparticles; Cu2O Nanoparticles; Curing; Polyimide; Nano-Floating Gate Memory; ROOM-TEMPERATURE; COULOMB-BLOCKADE; NANOCRYSTALS; FABRICATION; TRANSISTORS; MICROSCOPE; LAYER;

D O I：

10.1166/jnn.2011.3966

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Cu and Cu2O nanoparticles were fabricated in polyimide by curing the stacked polyamic acid/Cu/polyamic acid on Si wafer and post heat treatment. Nanoparticle distribution in polyimide (a nnonolayer of vertically aligned nanoparticles or the randomly dispersed nanoparticles) can be controlled by changing the reactivity of Cu with PAA and curing atmosphere. About 6-7 nm sized Cu or Cu2O nanoparticles were observed in the polyimide film. The capacitance voltage curves were measured with Al/particles in polyimide/p-Si(100) specimens at 300 K, and the capacitance hystereses were observed at different sweep voltage ranges, which indicates that Cu2O or Cu nanoparticles can be utilized in next generation flash memories.

引用

页码：11100 / 11103

页数：4

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