Dynamic ON-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses

被引：140

作者：

Li, Rui ^{[1
]}

Wu, Xinke ^{[1
]}

Yang, Shu ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Current collapse; dynamic ON-state resistance; GaN devices; hard switching; soft switching; CURRENT COLLAPSE; IMPACT;

D O I：

10.1109/TPEL.2018.2844302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dynamic ON-state resistance (R-DSON) behavior of commercial GaN devices is very important for a GaN-based converter. Since the zero-voltage switching techniques are popular in high-frequency power conversion, a dynamic R-DSON test board integrating both hard- and soft-switching test circuits is built in this study. Two types of commercial GaN devices are tested and compared under hard- and soft-switching conditions by double-pulse and multipulse test modes, respectively. It has been found that their dynamic R-DSON exhibit different behaviors depending on the OFF-state voltage and frequency under hard- and soft-switching conditions due to different device technologies, which should be taken fully into account for GaN-based converter design and loss estimation. In order to simulate the R-DSON behavior in a steady-state operating converter, a multipulse measurement has been implemented, the results of which are compared with that of double-pulse test. Furthermore, the primary trapping mechanisms responsible for dynamic R-DSON increase under different switching conditions are identified and verified by the numerical device simulation using Silvaco TCAD tool.

引用

页码：1044 / 1053

页数：10

共 29 条

[11]

Hilt O, 2012, PROC INT SYMP POWER, P345, DOI 10.1109/ISPSD.2012.6229092

[12]

Huang XC, 2015, WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, P113, DOI 10.1109/WiPDA.2015.7369318

[13] Characterization and Enhancement of High-Voltage Cascode GaN Devices [J].

Huang, Xiucheng ;

Liu, Zhengyang ;

Lee, Fred C. ;

Li, Qiang .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) :270-277

[14] Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs [J].

Hwang, Injun ;

Kim, Jongseob ;

Chong, Soogine ;

Choi, Hyun-Sik ;

Hwang, Sun-Kyu ;

Oh, Jaejoon ;

Shin, Jai Kwang ;

Chung, U-In .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (12) :1494-1496

[15] Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors [J].

Jin, Donghyun ;

del Alamo, Jesus A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3190-3196

[16]

Joh J., 2014, P IEEE INT REL PHYS

[17] Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges [J].

Jones, Edward A. ;

Wang, Fei ;

Costinett, Daniel .

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) :707-719

[18]

Kaneko S, 2015, PROC INT SYMP POWER, P41, DOI 10.1109/ISPSD.2015.7123384

[19] Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance [J].

Li, Ke ;

Evans, Paul Leonard ;

Johnson, Christopher Mark .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (06) :5262-5273

[20]

Li R, 2018, APPL POWER ELECT CO, P898, DOI 10.1109/APEC.2018.8341120

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