Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

被引：36

作者：

Zhang, Z. Y. ^{[1
]}

Hogg, R. A. ^{[1
]}

Xu, B. ^{[2
]}

Jin, P. ^{[2
]}

Wang, Z. G. ^{[2
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

OPTICS LETTERS | 2008年 / 33卷 / 11期

关键词：

D O I：

10.1364/OL.33.001210

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 mm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 mu m. (C) 2008 Optical Society of America.

引用

页码：1210 / 1212

页数：3

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