The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel

被引:9
作者
Wu, Chien-Hung [1 ]
Huang, Bo-Wen [2 ]
Chang, Kow-Ming [2 ]
Wang, Shui-Jinn [3 ]
Lin, Jian-Hong [2 ]
Hsu, Jui-Mei [4 ]
机构
[1] Chung Hua Univ, Dept Elect Engn, Hsinchu 30012, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[3] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[4] Ind Technol Res Inst, Mech & Syst Res Labs, Hsinchu 31040, Taiwan
关键词
N-2 Plasma Treatment; AP-PECVD; IGZO TFTs; ELECTRICAL-PROPERTIES; BAND OFFSETS; STABILITY; JET;
D O I
10.1166/jnn.2016.12612
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The aim of this paper is to illustrate the N-2 plasma treatment for high-kappa ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N-2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N-2 plasma treatment with field-effect mobility (mu(FET)) of 22.5 cm(2)/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I-on/I-off) of 1.49x10(7).
引用
收藏
页码:6044 / 6048
页数:5
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