Direct experimental evidence for the role of oxygen in the luminescent properties of GaN

被引:94
作者
Toth, M [1 ]
Fleischer, K [1 ]
Phillips, MR [1 ]
机构
[1] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW 2007, Australia
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 03期
关键词
D O I
10.1103/PhysRevB.59.1575
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present experimental evidence of electron-beam-induced diffusion of O and H in unintentionally doped n-type GaN grown on a sapphire substrate. Impurity diffusion was investigated using cathodoluminescence kinetics and imaging at 4 and 300 K and by wavelength dispersive x-ray analysis. The results illustrate the significance of electron-beam-induced electromigration in wide band gap semiconductors, confirm the roles of O-N(.) in bound exciton, donor-acceptor pair and yellow emissions and suggest the involvement of O-N(.) and hydrogenated gallium vacancies in the previously unexplained blue luminescence. [S0163-1829(99)09403-5].
引用
收藏
页码:1575 / 1578
页数:4
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