Properties of ITO films deposited with different conductivity ITO targets

Characterizations were performed for ITO films deposited using different erosion ratios for the target surface and different conductivity targets. The ITO films were deposited on unheated substrates using dc magnetron sputtering with different conductive targets, and then the films were post-annealed in a H-2 atmosphere in a vacuum chamber. By increasing the target erosion ratio, the optimal O-2 addition ratio to obtain the lowest resistivity was decreased. For the post-annealed films, the resistivity of the ITO films consistently deceased with an increasing T-a, which can be attributed to the increase of the carrier density. By increasing the target erosion ratio, the XRD patterns of the post-annealed ITO films showed a higher peak intensity on the (222) plane than that on the (400) plane, implying that the oxidation of the ITO films was enhanced.