Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films

被引：1
作者：
Prokhorov, V. G. [1 ]
Kaminsky, G. G. [1 ]
Kim, J. M. [2 ]
Eom, T. W. [2 ]
Park, J. S. [2 ]
Lee, Y. P. [2 ]
Svetchnikov, V. L. [3 ]
Levtchenko, G. G. [4 ]
Nikolaenko, Yu. M. [4 ]
Khokhlov, V. A. [4 ]
机构：
[1] Natl Acad Sci Ukraine, Inst Met Phys, UA-03142 Kiev, Ukraine
[2] Hanyang Univ, Q Psi & Dept Phys, Seoul 133791, South Korea
[3] Delft Univ Technol, Natl Ctr HREM, NL-2628 AL Delft, Netherlands
[4] Natl Acad Sci Ukraine, Donetsk Inst Phys & Technol, UA-83114 Donetsk, Ukraine
来源：
LOW TEMPERATURE PHYSICS | 2011年 / 37卷 / 04期
关键词：
TRANSPORT-PROPERTIES; CONDUCTIVITY; STRAIN;
D O I：
10.1063/1.3592229
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO3 (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592229]
引用
收藏
页码：305 / 308
页数：4
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