Origin of an enhanced colossal magnetoresistance effect in epitaxial Nd0.52Sr0.48MnO3 thin films

被引：1

作者：

Prokhorov, V. G. ^{[1
]}

Kaminsky, G. G. ^{[1
]}

Kim, J. M. ^{[2
]}

Eom, T. W. ^{[2
]}

Park, J. S. ^{[2
]}

Lee, Y. P. ^{[2
]}

Svetchnikov, V. L. ^{[3
]}

Levtchenko, G. G. ^{[4
]}

Nikolaenko, Yu. M. ^{[4
]}

Khokhlov, V. A. ^{[4
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Met Phys, UA-03142 Kiev, Ukraine

[2] Hanyang Univ, Q Psi & Dept Phys, Seoul 133791, South Korea

[3] Delft Univ Technol, Natl Ctr HREM, NL-2628 AL Delft, Netherlands

[4] Natl Acad Sci Ukraine, Donetsk Inst Phys & Technol, UA-83114 Donetsk, Ukraine

来源：

LOW TEMPERATURE PHYSICS | 2011年 / 37卷 / 04期

关键词：

TRANSPORT-PROPERTIES; CONDUCTIVITY; STRAIN;

D O I：

10.1063/1.3592229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nd0.52Sr0.48MnO3 films of various thicknesses have been prepared by dc magnetron sputtering on single crystal LaAlO3 (001) substrates. Reducing the film thickness leads to a significant suppression of ferromagnetic (FM) ordering and the Curie point falls below the antiferromagnetic (AFM) transition temperature. When this occurs, a huge rise of the magnetoresistance ratio from 400 to 60 000% is observed in an applied magnetic field of 5 T. We surmise that this new kind of the enhanced colossal magnetoresistance effect originates in the FM/AFM competition and the collapse of the charge-ordered state at high magnetic fields, rather than in the regular double-exchange mechanism. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592229]

引用

页码：305 / 308

页数：4

共 42 条

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