Evaluation and integration of metal gate electrodes for future generation dual metal CMOS

被引：12

作者：

Majhi, P ^{[1
]}

Wen, HC ^{[1
]}

Alshareef, H ^{[1
]}

Choi, K ^{[1
]}

Harris, R ^{[1
]}

Lysaght, P ^{[1
]}

Luan, H ^{[1
]}

Senzaki, Y ^{[1
]}

Song, SC ^{[1
]}

Lee, BH ^{[1
]}

Ramiller, C ^{[1
]}

机构：

[1] Intel Corp, Santa Clara, CA 95051 USA

来源：

2005 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY | 2005年

关键词：

D O I：

10.1109/ICICDT.2005.1502594

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of factors that contribute to the effective work function of metal gate electrodes are presented and reasons for disparity in reported values for effective work function of similar metals from different groups are discussed. Utilizing a standardized technique to accurately extract the effective work function of metal gates, the potential of amorphous metal gate materials and hafnium-based electrodes is presented. Also, the influence of metal gate materials and processing on the physical and electrical stability of the highk-metal gate stacks are discussed.

引用

页码：69 / 72

页数：4