Electrical properties of amorphous As2Se3-GeSe2-SnTe thin films

被引：0

作者：

Parvanov, S

Vassilev, V

Aljihmani, L

机构：

[1] Univ Chem Technol & Met, Cent Res Lab, BU-1756 Sofia, Bulgaria

[2] Univ Chem Technol & Met, Dept Semicond, BU-1756 Sofia, Bulgaria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 03期

关键词：

chalcogenide glass; amorphous thin film; electrical properties;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The thermal activation energy of the films with different SnTe concentration is determined by the temperature dependence of conductivity. From electrical investigations some basic physical characteristics of the investigated semiconductor films were calculated applying the Christov's theory for injected electron currents. Effective electron mass (m(c)/m) in the conduction band, relative dielectric permittivity a of the films and the electron work function (chi) at the Al/(As2Se3-GeSe2-SnTe) interface as a function of SnTe content were determined.

引用

页码：1299 / 1304

页数：6

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