Frequency-dependent annealing characteristics of the implant-isolated GaAs layers

被引：10
作者：
Kowalski, M
Partyka, J
Wegierek, P
Zukowski, P
Komarov, FF
Jurchenko, AV
Freik, D
机构：
[1] Lublin Univ Technol, PL-20618 Lublin, Poland
[2] Belarusian State Univ, Minsk 220064, BELARUS
[3] Vasyl Stefanyk Precarpathian Univ, UA-76000 Ivano Frankivsk, Ukraine
来源：
VACUUM | 2005年 / 78卷 / 2-4期
关键词：
gallium arsenide; proton implantation; annealing; electrical isolation;
D O I：
10.1016/j.vacuum.2005.01.112
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The isolation behaviour in n-type GaAs due to proton implantation is studied. Good-quality electrical isolation has been achieved by polyenergetic implantation of H+ ions with energies up to 400 keV. A conductivity dependence on the frequency has been measured for the GaAs layers modified by proton irradiation both before and after annealing in the temperature range of 100-400 degrees C. Such measurements allowed us to determine the mechanism of charge carrier transport in the implanted layer, as well as activation energies for hopping conductivity. The obtained results are strong evidence that some of the defects responsible for carrier trapping are related to antisite complex defects. Published by Elsevier Ltd.
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收藏
页码：311 / 317
页数：7
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