Planar two-dimensional electron gas (2DEG) IDT SAW filter on AlGaN/GaN heterostructure

被引:0
作者
Wong, King-Yuen [1 ]
Tang, Wilson [1 ]
Lau, Kei May [1 ]
Chen, Kevin J. [1 ]
机构
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源
2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6 | 2007年
关键词
two-dimensional electron gas; interdigital transducers; surface acoustic wave filters; AlGaN/GaN; fluoride-based plasma treatment; planar process;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Surface acoustic wave (SAW) filters using two-dimensional electron gas (2DEG) as interdigital transducers (IDT) on AlGaN/GaN heterostructure, has been demonstrated for the first time using a fluoride-based (CF4) plasma treatment technique. The CF4 plasma treatment is used to pattern 2DEG IDT on a planar surface without removing the top AlGaN layer. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with metal EDT SAW filters. It is shown that the massloading effects and the triple-transit-interference (TTI) are suppressed in the 2DEG EDT SAW devices owing to the removal of the metal IDTs. It is capable of reducing not only the passband ripple, but also the size of devices because 2DEG IDTs can be placed closer. In addition, the detection part of the SAW sensor can be performed on the top of the planar 2DEG IDTs rather than in the SAW propagation path. This novel SAW device can be integrated with high-electron mobility transistors (HEMTs) on AlGaN/GaN heterostructure to deliver a viable approach for single chip GaN wireless sensors.
引用
收藏
页码:2034 / 2037
页数:4
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