Joining of SiCf/SiC using a layered Ti3SiC2-SiCw and TiC gradient filler

被引：24

作者：

Fitriani, Pipit ^{[1
]}

Kwon, Heejin ^{[1
]}

Zhou, Xiaobing ^{[2
]}

Yoon, Dang-Hyok ^{[1
]}

机构：

[1] Yeungnam Univ, Sch Mat Sci & Engn, Gyongsan 38541, South Korea

[2] Chinese Acad Sci, NIMTE, Engn Lab Nucl Energy Mat, Beijing 315201, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2020年 / 40卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

SiCf/SiC; Joining; Ti3SiC2; SiC whisker; Mechanical properties; MECHANICAL-PROPERTIES; ELECTROPHORETIC DEPOSITION; SIC CERAMICS; COMPOSITES; FABRICATION; OXIDATION; CARBIDE; TAPE;

D O I：

10.1016/j.jeurceramsoc.2019.11.080

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A layered filler consisting of Ti3SiC2-SiC whiskers and TiC transition layer was used to join SiCf/SiC. The effects of SiCw reinforcement in Ti3SiC2 filler were examined after joining at 1400 or 1500 degrees C in terms of the microstructural evolution, joining strength, and oxidation/chemical resistances. The TiC transition layer formed by an in-situ reaction of Ti coating resulted in a decrease in thermal expansion mismatch between SiCf/SiC and Ti3SiC2, revealing a sound joint without cracks formation. However, SiCf/SiC joint without TiC layer showed formation of cracks and low joining strength. The incorporation of SiCw in Ti3SiC2 filler showed an increase in joining strength, oxidation, and chemical etching resistance due to the strengthening effect. The Ti3SiC2 filler containing 10 wt.% SiCw along with the formation of TiC was the optimal condition for joining of SiCf/SiC at 1400 degrees C, showing the highest joining strength of 198 MPa as well as improved oxidation and chemical resistance.

引用

页码：1043 / 1051

页数：9

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