Frontiers in III-V laser integration on silicon photonic integrated circuits

被引：0
|
作者：
Roelkens, G. [1 ,2 ]
机构：
[1] Ghent Univ Imec, Photon Res Grp, Technol Pk Zwijnaarde 15, B-9052 Ghent, Belgium
[2] Univ Ghent, Ctr Nano & Biophoton, B-9000 Ghent, Belgium
来源：
2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
III-V-on-silicon laser sources are key components for future silicon photonic integrated circuits. I will review our work on III-V-on-silicon lasers, covering different wavelength ranges (near-infrared to mid-infrared), different laser architectures (DFB, ECL, MLL, VCSELs, etc.) and integration methods (butt-coupling, die-to-wafer bonding and transfer printing).
引用
收藏
页码：71 / 72
页数：2
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