Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers

被引：18
作者：
Cao, HJ
Deng, H
Ling, H
Liu, CY
Smagley, VA
Caldwell, RB
Smolyakov, GA
Gray, AL
Lester, LF
Eliseev, PG
Osinski, M
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[2] Zia Laser Inc, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 20期
关键词：
D O I：
10.1063/1.1931044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report fabrication and characterization of semiconductor ring lasers with quantum-dot active region. The InAs/InGaAs/GaAs "dots-in-a-well" ridge-waveguide ring lasers are monolithically integrated with coupling waveguides and monitoring quantum-dot photodetectors. The lowest threshold current density for semiconductor ring lasers is demonstrated. When enhanced by a forward biased S-section waveguide, stable unidirectional operation with record suppression ratio of counterpropagating waves exceeding 30 dB is achieved. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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