TE/TM mode full-spatial decomposition of AlGaN-based deep ultraviolet light-emitting diodes

被引：10

作者：

Zhang, Shuang ^{[1
]}

Wang, Shuai ^{[1
]}

Zhang, Jun ^{[1
]}

Long, Hanling ^{[1
]}

Gao, Yang ^{[1
]}

Dai, Jiangnan ^{[1
]}

Chen, Changqing ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 19期

关键词：

AlGaN; deep ultraviolet light emitting diodes; TE; TM mode light; sapphire sidewall roughening; EXTRACTION EFFICIENCY; OPTICAL POLARIZATION; FLIP-CHIP; BEHAVIOR;

D O I：

10.1088/1361-6463/ab740b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The full-spatial decomposition of transverse electric (TE)/transverse magnetic (TM) mode in AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) has been experimentally investigated by introducing self-built light intensity test system mainly composed of angle resolution bracket, Glan-Taylor prism and spectrometer. Through roughening the sapphire sidewall, the extraction efficiency of DUV-LED is improved, for both TE and TM mode light with no polarization selectivity. The introduction of self-built light intensity metrology system has been reflected via scribing the sapphire sidewalls using various laser conditions, which show a reliability in the enhancement validation of the light extraction efficiency. More importantly, the self-built light intensity test system enables effective feedback on epitaxial structures and chip structure design and provides a new perspective to design high efficiency AlGaN-based DUV-LEDs.

引用

页数：7

共 36 条

[1]

Adachi S, 2013, OPTICAL CONSTANTS CR

[2]

[Anonymous], 2017, Appl. Phys. Lett, DOI DOI 10.1063/1.4983283

[3] Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates [J].

Bryan, Zachary ;

Bryan, Isaac ;

Mita, Seiji ;

Tweedie, James ;

Sitar, Zlatko ;

Collazo, Ramon .

APPLIED PHYSICS LETTERS, 2015, 106 (23)

[4] Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes [J].

Chen, Xinjuan ;

Ji, Cheng ;

Xiang, Yong ;

Kang, Xiangning ;

Shen, Bo ;

Yu, Tongjun .

OPTICS EXPRESS, 2016, 24 (10) :A935-A942

[5] Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures [J].

Djavid, Mehrdad ;

Mi, Zetian .

APPLIED PHYSICS LETTERS, 2016, 108 (05)

[6]

Edwards D.F., 1985, Handbook of optical constants of solids

[7] Strain effect on the optical polarization properties of c-plane Al0.26Ga0.74N/GaN superlattices [J].

Fan, Shunfei ;

Qin, Zhixin ;

He, Chenguang ;

Wang, Xinqiang ;

Shen, Bo ;

Zhang, Guoyi .

OPTICS EXPRESS, 2014, 22 (06) :6322-6328

[8] Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films [J].

Fu, D. Y. ;

Zhang, R. ;

Wang, B. G. ;

Zhang, Z. ;

Liu, B. ;

Xie, Z. L. ;

Xiu, X. Q. ;

Lu, H. ;

Zheng, Y. D. ;

Edwards, G. .

APPLIED PHYSICS LETTERS, 2009, 94 (19)

[9] Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening [J].

Guo, Yanan ;

Zhang, Yun ;

Yan, Jianchang ;

Xie, Haizhong ;

Liu, Lei ;

Chen, Xiang ;

Hou, Mengjun ;

Qin, Zhixin ;

Wang, Junxi ;

Li, Jinmin .

APPLIED PHYSICS LETTERS, 2017, 111 (01)

[10] Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes [J].

Hou, Mengjun ;

Qin, Zhixin ;

He, Chenguang ;

Cai, Jun'an ;

Wang, Xinqiang ;

Shen, Bo .

OPTICS EXPRESS, 2014, 22 (16) :19589-19594

← 1 2 3 4 →