A High-Power 105-120 GHz Broadband On-Chip Power-Combined Frequency Tripler

We report on the design, fabrication and characterization of a high-power and broadband 105-120 GHz Schottky diode frequency tripler based on a novel on-chip power combining concept that allows superior power handling than traditional approaches. The chip features twelve anodes on a 50 mu m thick GaAs substrate. At room temperature, the tripler exhibits a 17% 3 dB bandwidth and a similar to 30% peak conversion efficiency for a nominal input power of around 350-400 mW, and similar to 20% efficiency for its maximum operational input power of 800-900 mW. This tripler can deliver maximum power levels very close to 200 mW. The on-chip power-combined frequency tripler is compared with a traditional tripler designed for the same band using the same design parameters.