Characterization of Ferroelectric Ba0.6Sr0.4TiO3 Thin Films on Different Substrates for Reconfigurable Microwave Application

被引:0
|
作者
El-Shaarawy, Heba B. [1 ,2 ,3 ,4 ]
Pacchini, S. [1 ,2 ,3 ,4 ]
Ouagague, B. [1 ,2 ,3 ,4 ]
Payan, S. [5 ,6 ,7 ]
Rousseau, A. [5 ,6 ,7 ]
Maglione, M. [5 ,6 ,7 ]
Plana, R. [1 ,2 ,3 ,4 ]
机构
[1] CNRS, 7 Ave colonel Roche, F-31077 Toulouse, France
[2] LAAS, F-31077 Toulouse, France
[3] Univ Toulouse, F-31077 Toulouse, France
[4] UPS, INSA, INP, ISAE, F-31077 Toulouse, France
[5] ICMCB, F-33608 Pessac, France
[6] CNRS, F-33608 Pessac, France
[7] Univ Bordeaux 1, F-33608 Pessac, France
来源
40TH EUROPEAN MICROWAVE CONFERENCE | 2010年
关键词
LAYER;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper addresses the characterization of Ba0.6Sr0.4TiO3 dielectric properties on different dielectric substrates using three different components. First, for low frequencies, metal-insulator-metal (MIM) capacitors are used to determine the BST dielectric constant, loss tangent and tunability for different biasing voltages from 0-30 V showing a tunability range of 66%. For microwave frequency ranges, coplanar waveguides (CPW), and interdigital capacitors (IDCs) are investigated on silicon, R-plane sapphire (Al2O3) and magnesium oxide (MgO) substrates. CPW is used to determine the complex propagation constant, while IDCs are used to determine the BST voltage tunability from 0-55 V over 1-20 GHz. Sapphire and MgO introduce low loss tangent values of 0.03, while sapphire gives better tunability (20% at 18 GHz) than MgO (8.3% at 18 GHz).
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页码:886 / 889
页数:4
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