Time-resolved charge transport sensing by chemoreceptive neuron MOS transistors (CvMOS) with microfluidic channels

被引：7
作者：
Jacquot, Blake C. [1 ]
Lee, Chungho
Shen, Yumin Nick
Kan, Edwin Chihchuan
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA
[2] Spansion LLC Non Volatile Mem Technol Dev Grp, Sunnyvale, CA 94088 USA
[3] Taiwan Semicond Mfg Co, Hsinchu 300, Taiwan
来源：
IEEE SENSORS JOURNAL | 2007年 / 7卷 / 9-10期
关键词：
chemical sensor; field-effect transistor (FET); floating-gate; microfluidies;
D O I：
10.1109/JSEN.2007.904893
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Charge-based sensing in chemoreceptive neuron MOS (C nu MOS) transistors with extended floating-gate structures has brought forth features that are beneficial to the system integration of chemical sensing. This paper presents the results of integrating C nu MOS with wafer-bonding microfluidic channels for reliable time-resolved ion and molecular transport sensing, which can find potential applications in a microanalysis system.
引用
收藏
页码：1429 / 1434
页数：6
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