Effect of O2 concentration on metal-insulator transition properties of vanadium oxide thin films prepared by radio frequency magnetron sputtering

被引：11
作者：
Lee, Jang Woo [1 ]
Min, Su Ryun [1 ]
Cho, Han Na [1 ]
Chung, Chee Won [1 ]
机构：
[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 20-21期
关键词：
metal-insulator transition; vanadium oxide; sputtering; deposition;
D O I：
10.1016/j.tsf.2007.03.066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of O-2 concentration on metal-insulator transition (MIT) of vanadium oxide (VOx) thin films was studied in terms of structural and electrical properties. The VOx films were prepared by varying O-2 concentration using reactive radio frequency magnetron sputtering with a vanadium target. As the O-2 concentration in O-2/Ar gas increased from 1% to 7%, the deposition rate of VOx films abruptly decreased and the crystalline phases of the films were transformed from V2O3 to V2O5. The VOx films deposited at 2% O-2 mainly consisted of the VO2 phase and showed better crystallinity than those deposited at other O-2 concentrations. From the current-voltage measurements of Pt/VOx/Pt capacitors, the VOx films deposited at 2% O-2 showed excellent MIT properties which can be applied to memory devices. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：7740 / 7743
页数：4
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