Effect of O2 concentration on metal-insulator transition properties of vanadium oxide thin films prepared by radio frequency magnetron sputtering

被引：11

作者：

Lee, Jang Woo ^{[1
]}

Min, Su Ryun ^{[1
]}

Cho, Han Na ^{[1
]}

Chung, Chee Won ^{[1
]}

机构：

[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 20-21期

关键词：

metal-insulator transition; vanadium oxide; sputtering; deposition;

D O I：

10.1016/j.tsf.2007.03.066

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of O-2 concentration on metal-insulator transition (MIT) of vanadium oxide (VOx) thin films was studied in terms of structural and electrical properties. The VOx films were prepared by varying O-2 concentration using reactive radio frequency magnetron sputtering with a vanadium target. As the O-2 concentration in O-2/Ar gas increased from 1% to 7%, the deposition rate of VOx films abruptly decreased and the crystalline phases of the films were transformed from V2O3 to V2O5. The VOx films deposited at 2% O-2 mainly consisted of the VO2 phase and showed better crystallinity than those deposited at other O-2 concentrations. From the current-voltage measurements of Pt/VOx/Pt capacitors, the VOx films deposited at 2% O-2 showed excellent MIT properties which can be applied to memory devices. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：7740 / 7743

页数：4

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