Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions

被引：25

作者：

Moutanabbir, O ^{[1
]}

Terreault, B ^{[1
]}

机构：

[1] Univ Quebec, INRS, EMT, Varennes, PQ J3X 1S2, Canada

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 05期

关键词：

D O I：

10.1063/1.1861502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon blistering was achieved at unprecedently low ion fluences of 2 x 10(15) He/cm(2) (8 keV) followed by 6 x 10(15) H/cm(2) (5 keV), but no blistering occurs for reversed order (H+He), or (He+D) coimplantation up to a high fluence. Raman scattering data suggest that: (i) the He synergy is due to He assistance in the appearance of H-passivated internal surfaces and their pressurization at high temperature; (ii) the order effect is due to the destruction by the room-temperature He postbombardment of favorable Si-H structures; and (iii) the isotope effect is due to the deuterated multivacancies evolving into surprisingly stable interstitial and bond-centered configurations. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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