Formation of Nanoscale Structures on the Surface of MgO Films Upon Bombardment with Low-Energy Ions

Mg nanofilms 1-2 nm thick are obtained on a MgO/Mg surface by bombardment with Ar+ ions. It is shown that to obtain homogeneous Mg films, the most optimal modes of ion implantation are: energy of E-0 = 1-5 keV, dose of D = 8 x 10(16) cm(-2), and an angle of ion incidence of alpha = 0 degrees-10 degrees relative to the normal. The composition, electronic structure, and surface morphology of the obtained films are investigated. It is found that a transition layer with a thickness of similar to 20-25 angstrom, which is 4-5 times greater than the thickness of the Mg film, appears at the Mg-MgO boundary. In all cases, the structure of the Mg film is close to amorphous. An approximate energy-band diagram of the Mg/MgO system is constructed. The obtained thin Mg layers are potentially suitable for creating device structures of the metal-insulator-semiconductor (MIS) type, nanoscale contacts and barrier layers on the surface of semiconductor and dielectric films.