Effect of Electromagnetic Interference (EMI) on the DC Shift, Harmonic and Intermodulation Performance of Diode-Connected NMOSFET

被引：2

作者：

Abuelma'atti, Muhammad Taher ^{[1
]}

Abuelmaatti, Ali M. T. ^{[2
]}

机构：

[1] King Fahd Univ Petr & Minerals, Dhahran 31261, Saudi Arabia

[2] RFMD UK Ltd, Newton Aycliffe DL5 6JW, Durham, England

来源：

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING | 2011年 / 67卷 / 01期

关键词：

Electromagnetic interference; Harmonics; Intermodulation; MOSFET; RADIO-FREQUENCY INTERFERENCE;

D O I：

10.1007/s10470-011-9616-7

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper a new approximation is presented for the nonlinear relationship between the gate-to-source voltage and the current of a diode-connected NMOSFET. Using this expression closed-form expressions are obtained for the DC and the amplitudes of the fundamental, second- and third-harmonic and intermodulation components of the gate-to-source voltage resulting from exciting the diode-connected NMOSFET by a DC biasing current plus a superimposed multisinusoidal EMI. Comparison between calculated and simulated results is included.

引用

页码：109 / 116

页数：8

共 16 条

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