A Ku-band Phased Array in Package Integrating Four 180 nm CMOS Transceivers with On-chip Antennas

被引：0

作者：

Zhang, Xiaoning ^{[1
]}

Song, Yexi ^{[1
]}

Yu, Chao ^{[1
]}

Chen, Dong ^{[1
]}

Zhang, Lin ^{[1
]}

Sun, Shoutian ^{[1
]}

Chen, Zhilin ^{[1
]}

Liu, Huihua ^{[1
]}

Zhao, Chenxi ^{[1
]}

Wu, Yunqiu ^{[1
]}

Kang, Kai ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China

来源：

2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年

基金：

中国国家自然科学基金;

关键词：

Ku band; phased array; on-chip antenna; 180 nm CMOS process;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a phased array, which is composed of four independent transceivers integrated with on-chip antennas. Every transceiver with an on-chip antenna is fabricated in a standard 180 nm CMOS process. To achieve a higher gain and sidelobe suppression level, an off-chip guard ring array is used. Considering the fabrication error, the influence of the length of bonding wire is studied. At 17 GHz, the phased array scanning region is +/- 28 degrees with a 10 dB sidelobe suppression level, and +/- 32 degrees with an 8.8 dB sidelobe suppression level. Meanwhile, the peak equivalent isotropic radiated power (EIRP) is 14 dBm. Every single transceiver with an on-chip antenna occupies 6.2x1.3 mm(2). Besides, each receiver channel (RX) draws 114 mA from a 1.8V supply, while a transmitter channel (TX) consumes 145 mA from a 3.3V supply.

引用

页码：616 / 619

页数：4

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