Investigation of resistive switching behaviours in WO3-based RRAM devices

被引：49

作者：

Li Ying-Tao ^{[1
,2
]}

Long Shi-Bing ^{[2
]}

Lue Hang-Bing ^{[2
]}

Liu Qi ^{[2
]}

Wang Qin ^{[2
]}

Wang Yan ^{[1
,2
]}

Zhang Sen ^{[2
]}

Lian Wen-Tai ^{[2
]}

Liu Su ^{[1
]}

Liu Ming ^{[2
]}

机构：

[1] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

来源：

CHINESE PHYSICS B | 2011年 / 20卷 / 01期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

resistive random access memory; resistive switching; nonvolatile; WO3; LOW-POWER;

D O I：

10.1088/1674-1056/20/1/017305

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours

引用

页数：7

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