Investigations of electrical properties of Eu- and Pd-doped titanium dioxide thin films on silicon

In this work, investigations of electrical properties of Eu- and Pd-doped TiO2 thin films have been outlined. Thin films were deposited by low pressure hot target reactive magnetron sputtering from metallic Ti-Eu-Pd mosaic target on conventional silicon wafers. For electrical characterization of prepared thin films both temperature dependent resistivity and current to voltage (I-V) characteristics have been examined. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix modified its properties to obtain n-type oxide-semiconductor which is electrically and optically active at room temperature. Additionally from I-V measurements the formation of heterojunction at the interface of thin film-silicon was confirmed.