Enhanced device performance of quantum-dot light-emitting diodes via 2,2′-Bipyridyl ligand exchange

Quantum dots (QDs) are electroluminescent (EL) materials that have been developed as promising emitters in next-generation displays. The amount of charge carriers that travel to the light-emitting layer located at the interface between the hole- and electron-transport layers must be balanced in these displays to achieve maximum luminous efficiency. An existing amine ligand (oleylamine), which was coordinated on the surface of redemitting InP/ZnSeS/ZnS QDs, was partially exchanged with two 2,2 '-bipyridyl derivatives to enhance the EL properties; the QD light-emitting diode (QD-LED) performance was also investigated. Thermogravimetric and 1H nuclear magnetic resonance analyses were used to examine the bipyridyl-ligand-partially-substituted QDs. Photoluminescence spectroscopy and transmission electron microscopy revealed that the emission wavelength (630 nm) and size (7.3 nm) of the QDs were not altered upon ligand exchange. Significant improvements were observed in the electronic properties of QD-LED devices fabricated using the bipyridyl-ligand-substituted QDs. The bipyridyl ligands lowered the charge-injection barrier and improved the charge balance in the QDs. Highperformance QD-LED devices were consequently realized with an augmentation of two times in current density, and three times in brightness, external quantum efficiency, and current efficiency.