PTAT sensors based on SJFETs

被引：0
|
作者：
Amon, S [1 ]
Vrtacnik, D [1 ]
Resnik, D [1 ]
Krizaj, D [1 ]
Aljancic, U [1 ]
Mozek, M [1 ]
机构：
[1] Univ Ljubljana, Fac Elect Engn, LMS, Ljubljana 1000, Slovenia
来源：
MELECON 2000: INFORMATION TECHNOLOGY AND ELECTROTECHNOLOGY FOR THE MEDITERRANEAN COUNTRIES, VOLS 1-3, PROCEEDINGS | 2000年
关键词：
SJFET; current generator; PTAT temperature sensor; integration; discrete silicon device technology;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.
引用
收藏
页码：802 / 805
页数：4
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