Dead-time optimisation for a phase-shifted dc-dc full bridge converter with GaN HEMT

被引：8

作者：

Joo, D. M. ^{[1
]}

Lee, B. K. ^{[1
]}

Kim, J. S.

机构：

[1] Sungkyunkwan Univ, Dept Elect & Comp Engn, 300 Cheoncheon Dong, Suwon, Gyeonggi Do, South Korea

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

gallium compounds; III-V semiconductors; wide band gap semiconductors; optimisation; DC-DC power convertors; high electron mobility transistors; zero voltage switching; power semiconductor switches; dead-time optimisation; phase-shifted dc-dc full bridge converter; HEMT; zero voltage switching condition; power semiconductor switch; gallium nitride high-electron-mobility transistor; GaN;

D O I：

10.1049/el.2015.3650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate dead-time adjustment method for phase-shifted full bridge (PSFB) converter is presented. This method allows the dead-time of converters to be optimised to meet zero voltage switching condition. The optimum dead-time range can be predicted with high accuracy for any type of power semiconductor switch, including gallium nitride high-electron-mobility transistor, so that a practical design for a PSFB converter can be realised. The validity of the proposed dead-time optimisation method was verified by experimental results with a 600 W prototype.

引用

页码：769 / U93

页数：2

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