Microstructure and thermoelectric properties of Sn-doped Bi2Te2.7Se0.3 thin films deposited by flash evaporation method

被引：16

作者：

Duan, X. K. ^{[1
]}

Jiang, Y. Z. ^{[2
]}

机构：

[1] Jiujiang Univ, Sch Mech & Mat Engn, Ctr New Energy Mat Res, Jiujiang 332005, Peoples R China

[2] Jiujiang Univ, Sch Elect Engn, Jiujiang 332005, Peoples R China

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 10期

关键词：

Sn doping; Thin films; Thermoelectric properties; Flash evaporation; CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-RESISTIVITY; TRANSPORT-PROPERTIES; TEMPERATURE-DEPENDENCE; OPTIMIZATION; THICKNESS; BI2TE3; COEVAPORATION; DEVICES; GROWTH;

D O I：

10.1016/j.tsf.2010.11.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Bi1-xSnx)(2)Te2.7Se0.3 thermoelectric thin films with thickness of 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were analyzed by X-ray diffraction and field emission scanning electron microscopy respectively. Effects of Sn-doping concentration on thermoelectric properties of the annealed thin films were investigated by room-temperature measurement of Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 12.8 mu W/cmK(2) (x=0.003). From x=0.004 to 0.01 Sn doping concentration, the Seebeck coefficients are positive and show p-type conduction. The Seebeck coefficient and electrical resistivity gradually decrease with increasing Sn doping concentration. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：3007 / 3010

页数：4

共 30 条

[1] Structural, electrical and thermoelectrical properties of (Bi1-xSbx)2Te3 thin films grown by MOCVD process [J].

Aboulfarah, B ;

Giani, A ;

Boyer, A ;

Mzerda, A .

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX, 2000, 25 (04) :263-267

[2] Growth of (Bi1-xSbx)2Te3 thin films by metal-organic chemical vapour deposition [J].

Aboulfarah, B ;

Mzerd, A ;

Giani, A ;

Boulouz, A ;

Pascal-Delannoy, F ;

Foucaran, A ;

Boyer, A .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 62 (02) :179-182

[3] Cooling, heating, generating power, and recovering waste heat with thermoelectric systems [J].

Bell, Lon E. .

SCIENCE, 2008, 321 (5895) :1457-1461

[4] Transport properties of V-VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices [J].

Boulouz, A ;

Chakraborty, S ;

Giani, A ;

Delannoy, FP ;

Boyer, A ;

Schumann, J .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) :5009-5014

[5] Thermoelectric properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thin films deposited by direct current magnetron sputtering [J].

Bourgault, D. ;

Garampon, C. Giroud ;

Caillault, N. ;

Carbone, L. ;

Aymami, J. A. .

THIN SOLID FILMS, 2008, 516 (23) :8579-8583

[6] Thermoelectric properties of the flash-evaporated n-type Bi2Te2.4Se0.6 thin films [J].

Cho, KW ;

Kim, IH .

MATERIALS LETTERS, 2005, 59 (8-9) :966-970

[7]

Chowdhury I, 2009, NAT NANOTECHNOL, V4, P235, DOI [10.1038/nnano.2008.417, 10.1038/NNANO.2008.417]

[8] Thickness and temperature dependence of electrical properties of Bi2(Te0.1Se0.9)3 thin films [J].

Das, VD ;

Selvaraj, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1518-1522

[9] THERMOELECTRIC-POWER AND ELECTRICAL-RESISTIVITY OF CRYSTALLINE ANTIMONY TELLURIDE (SB2TE3) THIN-FILMS - TEMPERATURE AND SIZE EFFECTS [J].

DAS, VD ;

SOUNDARARAJAN, N .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2332-2341

[10] Structural and thermoelectric properties of Ag-doped Bi2(Te0.95Se0.05)3 thin films prepared by flash evaporation [J].

Duan, Xingkai ;

Yang, Junyou ;

Xiao, Chengjing ;

Zhu, Wen .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (19) :5971-5974

← 1 2 3 →