a-IGZO THIN FILM TRANSISTORS WITH CHANNEL LAYER DEPOSITED AT ROOM TEMPERATURE AND 250°C

被引：0
|
作者：
Deng, Wei [1 ]
He, Xin [1 ]
Xiao, Xiang [2 ]
Wang, Ling [2 ]
Meng, Weizhi [2 ]
Zhang, Shengdong [1 ,2 ]
机构：
[1] Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China
[2] Peking Univ, Key Lab TFT & Adv Display, Shenzhen 508055, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The a-IGZO thin film transistors with channel layer deposited at room temperature and 250 degrees C are fabricated in this work. Results show the TFTs with IGZO film deposited at 250 degrees C have lower threshold voltage, higher carrier mobility, and better sub-threshold slope than that with IGZO film deposited at room temperature. X-ray photoelectron spectroscopy measurement shows the proportion of Indium atoms in the IGZO film deposited at 250 degrees C is higher than at room temperature.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Room temperature deposited indium zinc oxide thin film transistors
    Wang, Yu-Lin
    Ren, F.
    Lim, Wantae
    Norton, D. P.
    Pearton, S. J.
    Kravchenko, I. I.
    Zavada, J. M.
    APPLIED PHYSICS LETTERS, 2007, 90 (23)
  • [22] Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer
    Kim, Yeo-Myeong
    Kang, Han-Byeol
    Kim, Gi-Heon
    Hwang, Chi-Sun
    Yoon, Sung-Min
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (10) : 1387 - 1389
  • [23] Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer
    Mroczynski, R.
    Wachnicki, L.
    Gieraltowska, S.
    ELECTRON TECHNOLOGY CONFERENCE 2016, 2016, 10175
  • [24] Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor
    Lin, Cheng-I
    Fang, Yean-Kuen
    Chang, Wei-Chao
    Chiou, Mao-Wei
    Chen, Chih-Wei
    MICROELECTRONICS RELIABILITY, 2014, 54 (05) : 905 - 910
  • [25] Photo-Induced Room-Temperature Gas Sensing with a-IGZO Based Thin-Film Transistors Fabricated on Flexible Plastic Foil
    Knobelspies, Stefan
    Bierer, Benedikt
    Daus, Alwin
    Takabayashi, Alain
    Salvatore, Giovanni Antonio
    Cantarella, Giuseppe
    Perez, Alvaro Ortiz
    Woellenstein, Juergen
    Palzer, Stefan
    Troster, Gerhard
    SENSORS, 2018, 18 (02)
  • [26] A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors
    Wu, Gwomei
    Sahoo, Anup K.
    Chen, Dave W.
    Chang, J. W.
    MATERIALS, 2018, 11 (12)
  • [27] High-Performance Drain-Offset a-IGZO Thin-Film Transistors
    Mativenga, Mallory
    Choi, Min Hyuk
    Kang, Dong Han
    Jang, Jin
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (05) : 644 - 646
  • [28] Enhanced performance of a-IGZO thin-film transistors by forming AZO/IGZO heterojunction source/drain contacts
    Zou, Xiao
    Fang, Guojia
    Wan, Jiawei
    Liu, Nishuang
    Long, Hao
    Wang, Haolin
    Zhao, Xingzhong
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (05)
  • [29] Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
    Hyung, Gun Woo
    Wang, Jian-Xun
    Li, Zhao-Hui
    Koo, Ja-Ryong
    Kwon, Sang Jik
    Cho, Eou-Sik
    Kim, Young Kwan
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2013, 13 (06) : 4052 - 4055
  • [30] Test and Analysis of the ESD Robustness for the Diode-Connected a-IGZO Thin Film Transistors
    Tai, Ya-Hsiang
    Chiu, Hao-Lin
    Chou, Lu-Sheng
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (08): : 613 - 618
12345