EUV pupil optimization for 32nm pitch logic structures

被引:5
|
作者
Rio, D. [1 ]
Blanco, V. [2 ]
Franke, J. -H. [2 ]
Gillijns, W. [2 ]
Dusa, M. [3 ]
De Poortere, E. [1 ]
Van Adrichem, P. [4 ]
Lyakhova, K. [4 ]
Spence, C. [3 ]
Hendrickx, E. [2 ]
Biesmans, S. [5 ]
Nafus, K. [5 ]
机构
[1] ASML Belgium, Kapeldreef 75, B-3001 Leuven, Belgium
[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[3] ASML Silicon Valley, 399 W Trimble Rd, San Jose, CA 95131 USA
[4] ASML Netherlands BV, De Run 6501, NL-5504 DR Veldhoven, Netherlands
[5] Tokyo Electron Ltd, Minato Ku, Akasaka Biz Tower,3-1 Akasaka 5 Chome, Tokyo 1076325, Japan
来源
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2018 | 2018年 / 10809卷
关键词
SMO; EUV Pupil optimization; NXE:3300; NXE:3400; Computational lithography; 32 nm pitch logic; tip-to-tip; line-space; NILS;
D O I
10.1117/12.2503321
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A pupil optimization was carried out for the M2 layer of the imec N7 (foundry N5 equivalent) logic design. This is exposed as a single print EUV layer. We focused on the printability of the toughest parts of the design: a dense line space grating of 32 nm pitch and a tip-tip grating of 32 nm pitch, tip-to-tip target CD of 25 nm. We found that the pupil optimization can improve both the line space and the tip-to-tip gratings energy latitude and depth of focus. The tip-to-tip target CD can be pushed further, enabling further design scaling.
引用
收藏
页数:14
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