Electron Transport Properties of Rapidly Solidified (GeTe)x(AgSbTe2)1-x Pseudobinary Thermoelectric Compounds

被引：11

作者：

Kim, B. S. ^{[1
]}

Kim, I. H. ^{[2
]}

Lee, J. K. ^{[2
]}

Min, B. K. ^{[1
]}

Oh, M. W. ^{[1
]}

Park, S. D. ^{[1
]}

Lee, H. W. ^{[1
]}

Kim, M. H. ^{[2
]}

机构：

[1] Korea Electrotechnol Res Inst, Changwon Si 641120, Gyeongnam, South Korea

[2] Changwon Natl Univ, Changwon Si 641773, Gyeongnam, South Korea

来源：

ELECTRONIC MATERIALS LETTERS | 2010年 / 6卷 / 04期

关键词：

thermoelectric materials; electron transport properties; rapid solidification process; (GeTe)(x)(AgSbTe2)(1-x); PERFORMANCE; DEVICES; ALLOYS; MERIT;

D O I：

10.3365/eml.2010.12.181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(GeTe)(x)(AeSbTe(2))(1-x)(x = 80, 85) compounds were fabricated by melting-hot press and RSP-hot press processes. The (GeTe)(85)(AgSbTe2)(15) compound, which composed of mainly crystalline and partly amorphous structures, was produced in part by rapid solidification. X-ray diffraction analysis showed that the (GeTe)(x)(AgSbTe2)(1-x) compounds represented a single phase of GeTe. The electron transport properties were evaluated over the temperature ranee of RT similar to 773K, and then systematically changed with compositions x in (GeTe)(x)(AgSbTe2)(1-x) compounds. The maximum Seebeck coefficient was 227 mu V/K at 673K in the (GeTe)(80)(AgSbTe2)(20) compounds fabricated by melting and hot-press process. The minimum resistivity was shown in the (GeTe)(85)(AgSbTe2)(15)by melting and hot-press process.

引用

页码：181 / 185

页数：5

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