Preparation and characterization of highly (222)-oriented bismuth magnesium niobate thin film by sol-gel method

被引：4
|
作者：
Dong, Helei [1 ,2 ]
Tan, Qiulin [1 ,2 ]
Liang, Ting [1 ,2 ]
Jia, Pinggang [1 ,2 ]
Chen, Xiaoyong [1 ,2 ]
Li, Chen [1 ,2 ]
Hong, Yingping [1 ,2 ]
Xiong, Jijun [1 ,2 ]
机构：
[1] North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Peoples R China
[2] North Univ China, Sci & Technol Elect Test & Measurement Lab, Taiyuan 030051, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 181卷
基金：
中国国家自然科学基金;
关键词：
Sol-gel preparation; Thin films; Crystal growth; Microstructure; Texture; DIELECTRIC-PROPERTIES;
D O I：
10.1016/j.matlet.2016.06.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Highly (222)-oriented Bi1.5MgNb1.5O7 thin films have successfully been prepared on SiO2/HR-Si substrates by sol-gel method with rapid thermal annealing (RTA). The films were characterized using X-ray diffraction, high-resolution transmission electron microscope and atomic force microscope. The results revealed that the thus-derived films possessed a cubic pyrochlore structure with regular and smooth surface, and exhibited superior dielectric constant of about 170. The growth of (222)-oriented BMN thin film can be explained as a self-assembly process, and the mechanism of self-assembly process was elaborated. The formation of the large dielectric constant of the film was mainly assigned to the highly (222) orientation and large in-plane tensile strain. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：253 / 256
页数：4
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