Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation

被引：1

作者：

Shiozaki, N ^{[1
]}

Anantathanasarn, S ^{[1
]}

Sato, T ^{[1
]}

Hashizume, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, RCIQE, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

GaAs; AlGaAs; quantum wire; surface passivation; surface states; photoluminescence;

D O I：

10.1016/j.apsusc.2004.10.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Etched GaAs quantum wires (QWRs) and selectively grown (SG) QWRs were fabricated, and dependence of their photoluminescence (PL) properties on QWR width (W) and QWR distance to surface (d) were investigated. PL intensity greatly reduced with reduction of Wand d, due to non-radiative recombination through surface states. Surface passivation by growing a Si interface control layer (Si-ICL) on group III-terminated surfaces greatly improved PL properties. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：71 / 74

页数：4

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