Prediction of topological insulating behavior in crystalline Ge-Sb-Te

被引：77

作者：

Kim, Jeongwoo ^{[1
]}

Kim, Jinwoong ^{[1
]}

Jhi, Seung-Hoon ^{[1
,2
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Div Adv Mat Sci, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 20期

关键词：

ELECTRON-DIFFRACTION; GE2SB2TE5; BI2SE3;

D O I：

10.1103/PhysRevB.82.201312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a discovery, through first-principles calculations, that crystalline Ge-Sb-Te (GST) phase-change materials exhibit the topological insulating property. Our calculations show that the materials become topological insulator or develop conducting surfacelike interface states depending on the layer stacking sequence. It is shown that the conducting interface states originate from topological insulating Sb2Te3 layers in GSTs and can be crucial to the electronic property of the compounds. These interface states are found to be quite resilient to atomic disorders but sensitive to the uniaxial strains. We presented the mechanisms that destroy the topological insulating order in GSTs and investigated the role of Ge migration that is believed to be responsible for the amorphorization of GSTs.

引用

页数：4

共 26 条

[11] Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material [J].