Carbon impurities and the yellow luminescence in GaN

被引：560

作者：

Lyons, J. L. ^{[1
]}

Janotti, A. ^{[1
]}

Van de Walle, C. G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 15期

基金：

美国国家科学基金会;

关键词：

GALLIUM VACANCIES; DEFECTS; ACCEPTOR;

D O I：

10.1063/1.3492841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using hybrid functional calculations we investigate the effects of carbon on the electrical and optical properties of GaN. In contrast to the currently accepted view that C substituting for N (C-N) is a shallow acceptor, we find that C-N has an ionization energy of 0.90 eV. Our calculated absorption and emission lines also indicate that C-N is a likely source for the yellow luminescence that is frequently observed in GaN, solving the longstanding puzzle of the nature of the C-related defect involved in yellow emission. Our results suggest that previous experimental data, analyzed under the assumption that C-N acts as a shallow acceptor, should be re-examined. (c) 2010 American Institute of Physics. [doi:10.1063/1.3492841]

引用

页数：3

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