An efficient low-defectivity process for 193nm resist development

Increased lithography cluster tool productivity is required to reduce the cost of ownership (COO) of today's advanced 193nm processes. Coater/developer systems, which make up one half of a lithography cluster, have multiple process steps. Typically, the overall tool throughput is determined by the longest process stage. However, efforts to reduce process times, especially photoresist development, must be made without impact to critical dimension (CD) uniformity and baseline defect levels. A new developer nozzle hardware and process have been developed and evaluated on multiple 193nm photoresists that significantly decrease process time and chemical consumption.