Piezoresistive, optical and electrical properties of diamond like carbon and carbon nitride films

被引：11

作者：

Meskinis, S. ^{[1
,2
]}

Gudaitis, R. ^{[1
]}

Kopustinskas, V. ^{[1
]}

Tamulevicius, S. ^{[1
]}

Slapikas, K. ^{[1
]}

机构：

[1] Kaunas Univ Technol, Inst Phys Elect, Kaunas, Lithuania

[2] Kaunas Univ Technol, Ctr Int Studies, Kaunas, Lithuania

来源：

关键词：

Diamond like carbon; Carbon nitride; Electrical properties; Optical properties; TETRAHEDRAL AMORPHOUS-CARBON; A-C-H; THIN-FILMS; ELECTRONIC-PROPERTIES; DLC FILMS; TRIBOLOGICAL PROPERTIES; NITROGEN INCORPORATION; TEMPERATURE; DEPOSITION; THICKNESS;

D O I：

10.1016/j.diamond.2010.06.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present study diamond like carbon (DLC) and carbon nitride (a-CN(x) :H) films were deposited by closed drift ion source from the acetylene and nitrogen gas mixture. The piezoresistive, electrical and optical properties of ion beam synthesized DLC films were investigated. Piezoresistive properties of the diamond like carbon and carbon nitride films were evaluated by four point bending test. The piezoresistors were fabricated on crystalline alumina substrates using Al-based interdigitated finger type electrodes. Effects of the nitrogen concentration on the piezoresistive gauge factor were investigated. The dependence of the resistance of the metal/a-CN(x):H/metal structures on temperature has been studied. Current-voltage (I-V) and capacitance-voltage characteristics were measured for a-CN(x):H/Si heterostructures. The main current transport mechanisms were analyzed. Optical parameters of the synthesized films such as optical bandgap and B parameter (slope of the linear part of the Tauc plot) were investigated to study possible correlation with the piezoresistive properties. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：1249 / 1253

页数：5

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