Device-Level Vacuum Packaging for RF MEMS

被引:21
|
作者
Rahman, M. Shahriar [1 ,2 ]
Chitteboyina, Murali M. [1 ,2 ]
Butler, Donald P. [1 ,2 ]
Celik-Butler, Zeynep [1 ,2 ]
Pacheco, Sergio P. [3 ]
McBean, Ronald V. [3 ]
机构
[1] Univ Texas Arlington, Dept Elect Engn, Arlington, TX 76019 USA
[2] Univ Texas Arlington, Nanotechnol Res & Teaching Facil, Arlington, TX 76019 USA
[3] Freescale Semicond, Tempe, AZ 85284 USA
关键词
Alumina; device-level packaging; encapsulation; packaging; reliability; RF-MEMS; FABRICATION; SILICON;
D O I
10.1109/JMEMS.2010.2055541
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For specific RF applications, where the use of MEMS is highly attractive, cost-effective reliable packaging is one of the primary barriers to commercialization. Many RF MEMS devices require a hermetic or vacuum operation environment. This paper presents a post-CMOS-compatible method for vacuum packaging of RF MEMS devices by growing an encapsulation layer during the device fabrication. The resulting MEMS devices are surrounded by a vacuum cavity and can then be placed in a conventional low-cost circuit package. This is a low-temperature area-efficient device-level encapsulation for MEMS devices. RF MEMS resonators in a fixed-fixed configuration were used as the test bed since their quality factor can be used as a measure of the package quality. The encapsulation process is based on a double-sacrificial-layer surface micromachining technique, which is used to create a cavity under and above the resonator. Polyimide was used as the sacrificial layer, followed by the deposition of a packaging layer with trench cuts, which facilitate the sacrificial layer removal. The trench cuts were then sealed at a low pressure, forming a cavity around the device at the sealant layer deposition pressure. Extensive RF characterization and reliability tests were performed on the packaged resonators. [2009-0270]
引用
收藏
页码:911 / 918
页数:8
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