Sizeable enhancement of anti-weak localization effect in In2O3-x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment

被引：0

作者：

Kobori, H

Kawaguchi, M

Hatta, N

Ohyama, T

机构：

[1] Konan Univ, Fac Sci & Engn, Dept Phys, Kobe, Hyogo 6588501, Japan

[2] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 18卷 / 1-3期

关键词：

anti-weak localization; In2O3-x; thin film; heat treatment; H-2; gas;

D O I：

10.1016/S1386-9477(02)01025-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) effect in In2O3-x thin film (60 nm) caused by H-2 gas mixing (10%) in N-2 gas (9090) atmosphere on the heat treatment (HT). In case of the HT in pure N-2 gas, the AWL effect is recognized, but is very small. With respect to those experimental results, we conclude that interstitial indium atoms in In2O3-x are effectively generated and the AWL effect due to the spin-orbit interaction is come up. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：296 / 297

页数：2

共 5 条

[1] Two-to-three dimensional transition by magnetic field on weak localization phenomena for tilted magneto-conductance in In2O3-x films [J].