Effect of high magnetic field on transistor characteristics with applications to SEU testing.

被引：3

作者：

Phothimat, P ^{[1
]}

Awipi, M ^{[1
]}

机构：

[1] Tennessee State Univ, Dept Elect & Comp Engn, Nashville, TN 37209 USA

来源：

PROCEEDINGS IEEE SOUTHEASTCON '98: ENGINEERING FOR A NEW ERA | 1998年

关键词：

D O I：

10.1109/SECON.1998.673365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transistor characteristics are modified by the application of high magnetic fields. These changes are due to Hail effect voltages or magnetoresistance. Translations of device characteristics can be modeled by connecting voltage or current sources in series/parallel with the device. These translations are similar to the effect of ionizing radiation creating a plasma column in the device. This results in deterioration of device performance due to lowered noise margins in digital circuits. Because of the similarities of these effects, the magnetic field can, with some advantages, replace ionizing radiation in simulating single event upset (SEU) testing.

引用

页码：338 / 339

页数：2

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